Attributes

Key Value
Base Product NumberFQT1N60
CategoryDiscrete Semiconductor .
Current - Continuous Dr.200mA (Tc)
DescriptionMOSFET N-CH 600V 200MA .
Detailed DescriptionN-Channel 600 V 200mA (.
Digi-Key Part NumberFQT1N60CTF-WSTR-ND - Ta.
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .6.2 nC @ 10 V
Input Capacitance (Ciss.170 pF @ 25 V
Manufactureronsemi
Manufacturer Product Nu.FQT1N60CTF-WS
Manufacturer Standard L.63 Weeks
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Power Dissipation (Max)2.1W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs11.5Ohm @ 100mA, 10V
SeriesQFET?
Supplier Device PackageSOT-223-4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A
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