FQPF19N20

B00M1H5ZM8

MOSFET 200V N-Channel QFET

MOSFET 200V N-Channel QFETzoom

Attributes

Key Value
Base Product NumberFQPF19
CaseTO220FP, TO220F
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11.8A (Tc)
Drain current7.5A
Drain to Source Voltage.200 V
Drain-source voltage200V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate charge40nC
Gate Charge (Qg) (Max) .40 nC @ 10 V
Gate-source voltage?30V
Input Capacitance (Ciss.1600 pF @ 25 V
Kind of channelenhanced
Kind of packagetube
ManufacturerONSEMI, Fairchild Semic.
MfrONSEMI
MountingTHT
Mounting TypeThrough Hole
On-state resistance150m?
Operating Temperature-55?C ~ 150?C (TJ)
Packagetube
Package / CaseTO-220-3 Full Pack
Polarisationunipolar
Power dissipation50W
Power Dissipation (Max)50W (Tc)
Product StatusActive
Pulsed drain current48A
Rds On (Max) @ Id, Vgs150mOhm @ 5.9A, 10V
SeriesQFET?
SKU417160
Supplier Device PackageTO-220F-3
TechnologyMOSFET (Metal Oxide)
TypeTransistor
Type of transistorN-MOSFET
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Digi-Key135034511.1782350993430287onsemi1.17823509934 @ 302
HotendaH18207801.3911140Fairchild Semiconductor1.39 @ 1
thumbzoomTMEFQPF19N201.76156ONSEMI1.76 @ 1
thumbzoomRadwellFQPF19N202.11187FAIRCHILD SEMICONDUCTOR1.02.11 @ 1
Little DiodeFQPF19N2017.82173251In StockFairchild Semiconductor17.8217325 @ 1
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