Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.57A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .130 nC @ 10 V
Input Capacitance (Ciss.3130 pF @ 25 V
MfrInternational Rectifier
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-262-3 Long Leads, I?.
Power Dissipation (Max)200W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs23mOhm @ 28A, 10V
SeriesHEXFET?
Supplier Device PackageTO-262
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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