Attributes

Key Value
Base Product NumberFDMS86101
CategoryDiscrete Semiconductor .
Current - Continuous Dr.13A (Ta), 60A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .58 nC @ 10 V
Input Capacitance (Ciss.4120 pF @ 50 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Power Dissipation (Max)2.5W (Ta), 104W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs8mOhm @ 13A, 10V
SeriesPowerTrench?
Supplier Device Package8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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