Attributes

Key Value
Base Product NumberFQPF19
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11.8A (Tc)
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .40 nC @ 10 V
Input Capacitance (Ciss.1600 pF @ 25 V
Mfronsemi
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)50W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs150mOhm @ 5.9A, 10V
SeriesQFET?
Supplier Device PackageTO-220F-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A
prev


As an Amazon Associate I earn from qualifying purchases.

1759776223.0280