STMicroelectronics STI6N62K3

mpnSTI6N62K3
brandname: STMicroelectronics
manufacturername: STMicroelectronics

Attributes

Key	Value
Base Product Number	STI6N
Category	Discrete Semiconductor .
Current - Continuous Dr.	5.5A (Tc)
Drain to Source Voltage.	620 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	34 nC @ 10 V
Input Capacitance (Ciss.	875 pF @ 50 V
Mfr	STMicroelectronics
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-262-3 Long Leads, I?.
Part Status	Obsolete
Power Dissipation (Max)	90W (Tc)
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2.8A, 10V
Series	SuperMESH3?
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	4.5V @ 50?A

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