Attributes

Key Value
Base Product NumberSIA850
CategoryDiscrete Semiconductor .
Current - Continuous Dr.950mA (Tc)
Drain to Source Voltage.190 V
Drive Voltage (Max Rds .1.8V, 4.5V
FET FeatureSchottky Diode (Isolate.
FET TypeN-Channel
Gate Charge (Qg) (Max) .4.5 nC @ 10 V
Input Capacitance (Ciss.90 pF @ 100 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SC-70-6 Dual
Power Dissipation (Max)1.9W (Ta), 7W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs3.8Ohm @ 360mA, 4.5V
SeriesLITTLE FOOT?
Supplier Device PackagePowerPAK? SC-70-6 Dual
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id1.4V @ 250?A
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