Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11A (Ta)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .22 nC @ 10 V
Input Capacitance (Ciss.760 pF @ 25 V
MfrRohm Semiconductor
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Part StatusActive
Power Dissipation (Max)53W (Tc)
Rds On (Max) @ Id, Vgs400mOhm @ 3.8A, 10V
Series-
Supplier Device PackageTO-220FM
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id5V @ 320?A
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