mpn
R6511KNXC7G
brand
name: Rohm Semiconductor
manufacturer
name: Rohm Semiconductor
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
11A (Ta)
Drain to Source Voltage.
650 V
Drive Voltage (Max Rds .
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
22 nC @ 10 V
Input Capacitance (Ciss.
760 pF @ 25 V
Mfr
Rohm Semiconductor
Mounting Type
Through Hole
Operating Temperature
150?C (TJ)
Package
Tube
Package / Case
TO-220-3 Full Pack
Part Status
Active
Power Dissipation (Max)
53W (Tc)
Rds On (Max) @ Id, Vgs
400mOhm @ 3.8A, 10V
Series
-
Supplier Device Package
TO-220FM
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
5V @ 320?A