Attributes

Key Value
Base Product NumberIPA65R
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8A (Tc)
DescriptionMOSFET N-CH 650V 8A TO2.
Detailed DescriptionN-Channel 650 V 8A (Tc).
Digi-Key Part NumberIPA65R190C7XKSA1-ND
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .23 nC @ 10 V
Input Capacitance (Ciss.1150 pF @ 400 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPA65R190C7XKSA1
Manufacturer Standard L.39 Weeks
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)30W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs190mOhm @ 5.7A, 10V
SeriesCoolMOS? C7
Supplier Device PackagePG-TO220-FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 290?A
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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