Attributes

Key Value
Base Product NumberAPTM50
CategoryDiscrete Semiconductor .
Configuration2 N-Channel (Dual) Asym.
Current - Continuous Dr.51A
Drain to Source Voltage.500V
FET Feature-
Gate Charge (Qg) (Max) .340nC @ 10V
Input Capacitance (Ciss.10800pF @ 25V
MfrMicrosemi Corporation
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageBulk
Package / CaseSP3
Power - Max390W
Product StatusObsolete
Rds On (Max) @ Id, Vgs78mOhm @ 42A, 10V
SeriesPOWER MOS 8?
Supplier Device PackageSP3
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 2.5mA
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev


As an Amazon Associate I earn from qualifying purchases.

1759805778.9328