Attributes

Key Value
Current - Continuous Dr.23A (Tc)
Drain to Source Voltage.650V
Drive Voltage (Max Rds .10V
FET TypeN-Channel
Gate Charge (Qg) (Max) .17nC @ 10V
Input Capacitance (Ciss.2780pF @ 100V
Manufacturer Part NumberSIHH24N65EF-T1-GE3
Manufacturer Standard L.21 Weeks
Mounting TypeSurface Mount
Operating Temperature-55
Package / Case8-PowerTDFN
PackagingTape & Reel (TR)
Power Dissipation (Max)202W (Tc)
Rds On (Max) @ Id, Vgs158mOhm @ 12A, 10V
RoHS StatusROHS3 Compliant
Standard Package3,000
Supplier Device PackagePowerPAK
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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