SIHS36N50D-E3

mpnSIHS36N50D-E3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

VISHAY SILICONIX SIHS36N50D-E3 MOSFET, N-CH, 500V, 36A, SUPER-247 (10 pieces)

VISHAY SILICONIX SIHS36N50D-E3 MOSFET, N-CH, 500V, 36A, SUPER-247 (10 pieces)

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PartNumber: SIHS36N50D-E3
PackageQuantity: 10
Manufacturer: VISHAY SILICONIX
Label: VISHAY SILICONIX

Attributes

Key	Value
Alternate Part No.	78-SIHS36N50D-E3
Brand	Vishay / Siliconix
Category	Discrete Semiconductor .
Configuration	Single
Current - Continuous Dr.	36A (Tc)
Drain to Source Voltage.	500 V
Drive Voltage (Max Rds .	10V
Fall Time	68 ns
FET Feature	-
FET Type	N-Channel
Forward Transconductanc.	12.8 S
Gate Charge (Qg) (Max) .	125 nC @ 10 V
Id - Continuous Drain C.	36 A
Input Capacitance (Ciss.	3233 pF @ 100 V
Manufacturer	Vishay
Manufacturer Part No.	SIHS36N50D-E3
Maximum Operating Tempe.	+ 150 C
Mfr	Vishay Siliconix
Minimum Operating Tempe.	- 55 C
Mounting Style	Through Hole
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-247-3
Package/Case	Super247-3
Packaging	Tube
Part Status	Active
Pd - Power Dissipation	446 W
Power Dissipation (Max)	446W (Tc)
Product Category	MOSFET
Qg - Gate Charge	125 nC
Rds On (Max) @ Id, Vgs	130mOhm @ 18A, 10V
Rds On - Drain-Source R.	130 mOhms
Rise Time	89 ns
Series	E, -
Supplier Device Package	SUPER-247? (TO-274AA)
Technology	MOSFET (Metal Oxide)
Transistor Polarity	N-Channel
Typical Turn-Off Delay .	79 ns
Vds - Drain-Source Brea.	500 V
Vgs (Max)	?30V
Vgs th - Gate-Source Th.	5 V
Vgs(th) (Max) @ Id	5V @ 250?A

All Prices

Img	Seller	Supplier SKU	Min Price	MOQ	In Stock	Lead Time	Brand	Weight	Preferred Tier
	Digi-Key	SIHS36N50D-E3-ND	6.011	1	10		Vishay Siliconix		6.011 @ 10
	Future Electronics	6024776	7.62	25	10		Vishay		7.62 @ 25
	TME	SIHS36N50D-E3	7.84	1	22		VISHAY		7.84 @ 10
	swatee.com	SIHS36N50D-E3	13.85	1	29		Vishay		13.85 @ 10

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