Vishay Siliconix SISS70DN-T1-GE3

mpnSISS70DN-T1-GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Base Product Number	SISS70
Category	Discrete Semiconductor .
Current - Continuous Dr.	8.5A (Ta), 31A (Tc)
Drain to Source Voltage.	125 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	15.3 nC @ 10 V
Input Capacitance (Ciss.	535 pF @ 62.5 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	PowerPAK? 1212-8S
Part Status	Active
Power Dissipation (Max)	5.1W (Ta), 65.8W (Tc)
Rds On (Max) @ Id, Vgs	29.8mOhm @ 8.5A, 10V
Series	TrenchFET?
Supplier Device Package	PowerPAK? 1212-8S
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4.5V @ 250?A

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