Infineon Technologies IPB65R190C6ATMA1

mpnIPB65R190C6ATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	IPB65R
Category	Discrete Semiconductor .
Current - Continuous Dr.	20.2A (Tc)
Drain to Source Voltage.	650 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	73 nC @ 10 V
Input Capacitance (Ciss.	1620 pF @ 100 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)	151W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	190mOhm @ 7.3A, 10V
Series	CoolMOS?
Supplier Device Package	PG-TO263-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.5V @ 730?A

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