Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Collector (Ic.100 mA
Current - Collector Cut.100nA (ICBO)
DC Current Gain (hFE) (.120 @ 1mA, 5V
Frequency - Transition250 MHz
MfrToshiba Semiconductor a.
Mounting TypeSurface Mount
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23.
Part StatusActive
Power - Max200 mW
Resistor - Base (R1)47 kOhms
SeriesAutomotive, AEC-Q101
Supplier Device PackageS-Mini
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ .300mV @ 250?A, 5mA
Voltage - Collector Emi.50 V
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