SIR418DP-T1-GE3

B011N9US26

VISHAY SILICONIX SIR418DP-T1-GE3 N CHANNEL MOSFET, 40V, 40A (10 pieces)

VISHAY SILICONIX SIR418DP-T1-GE3 N CHANNEL MOSFET, 40V, 40A (10 pieces)zoom

Attributes

Key Value
Base Product NumberSIR418
CategoryDiscrete Semiconductor .
Current - Continuous Dr.40A (Tc)
Drain to Source Voltage.40 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .75 nC @ 10 V
Input Capacitance (Ciss.2410 pF @ 20 V
ManufacturerVISHAY
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SO-8
Power Dissipation (Max)39W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs5mOhm @ 20A, 10V
Series-
Supplier Device PackagePowerPAK? SO-8
TechnologyMOSFET (Metal Oxide)
Type of transistorN-MOSFET
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.4V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
TTISIR418DP-T1-GE30.48510000100Vishay0.485 @ 10000
HotendaH18270090.5461100Vishay/Siliconix0.546 @ 100
thumbzoomNewark35R61970.7953000100VISHAY0.795 @ 3000
TMESIR418DP-T1-GE30.923000100VISHAY0.92 @ 3000
Digi-Key26229261.184041100Vishay Siliconix1.18404 @ 100
RS Delivers814-1275P1.59841100Vishay1.5984 @ 100
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