Infineon Technologies IPC100N04S51R2ATMA1

mpnIPC100N04S51R2ATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	100A (Tc)
Drain to Source Voltage.	40 V
Drive Voltage (Max Rds .	7V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	131 nC @ 10 V
Input Capacitance (Ciss.	7650 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package / Case	8-PowerTDFN
Part Status	Active
Power Dissipation (Max)	150W (Tc)
Rds On (Max) @ Id, Vgs	1.2mOhm @ 50A, 10V
Supplier Device Package	PG-TDSON-8-34
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.4V @ 90?A

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