ON Semiconductor HUF75631S3ST

B07QNMFVK9

HUF75631S3ST, Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK T/R (25 Items)

HUF75631S3ST, Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK T/R (25 Items)zoom

Attributes

Key Value
Alternate Part No.512-HUF75631S3ST
BrandFairchild Semiconductor
CaseTO263
CategoryDiscrete Semiconductor .
Channel ModeEnhancement
ConfigurationSingle
Current - Continuous Dr.33A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
Fall Time55 ns
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .79 nC @ 20 V
Id - Continuous Drain C.33 A
Input Capacitance (Ciss.1220 pF @ 25 V
ManufacturerFairchild Semiconductor
Manufacturer Part No.HUF75631S3ST
Maximum Operating Tempe.+ 175 C
MfrFairchild Semiconductor
Minimum Operating Tempe.- 55 C
Mounting StyleSMD/SMT
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-263-3, D?Pak (2 Lead.
Package/CaseD2PAK-2
PackagingReel
Part # AliasesHUF75631S3ST_NL
Part StatusActive
Pd - Power Dissipation120 W
Power Dissipation (Max)120W (Tc)
Product CategoryMOSFET
Rds On (Max) @ Id, Vgs40mOhm @ 33A, 10V
Rds On - Drain-Source R.40 mOhms
Rise Time57 ns
Series-, HUF75631
SKU538783
Supplier Device PackageD2PAK (TO-263)
TechnologyMOSFET (Metal Oxide)
Transistor PolarityN-Channel
TypeMOSFET
Typical Turn-Off Delay .40 ns
Unit Weight1.312 g
Vds - Drain-Source Brea.100 V
Vgs (Max)?20V
Vgs - Gate-Source Break.20 V
Vgs(th) (Max) @ Id4V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18182641.28528001600Fairchild Semiconductor1.2852 @ 800
Digi-Key134860492.193916083921431914Fairchild Semiconductor2.19391608392 @ 143
Newark30C38692.3780025ONSEMI2.37 @ 25
thumbzoomswatee.comHUF75631S3ST3.131622Fairchild Semiconductor3.13 @ 25
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