Infineon Technologies BSR606NH6327XTSA1

mpnBSR606NH6327XTSA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	2.3A (Ta)
Drain to Source Voltage.	60 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	5.6 nC @ 5 V
Input Capacitance (Ciss.	657 pF @ 25 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23.
Power Dissipation (Max)	500mW (Ta)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	60mOhm @ 2.3A, 10V
Series	Automotive, AEC-Q101, O.
Supplier Device Package	PG-SC59-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.3V @ 15?A

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