mpn
BUK653R7-30C,127
brand
name: NXP USA Inc.
manufacturer
name: NXP USA Inc.
Attributes
Key
Value
Base Product Number
BUK65
Category
Discrete Semiconductor .
Current - Continuous Dr.
100A (Tc)
Drain to Source Voltage.
30 V
Drive Voltage (Max Rds .
4.5V, 10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
78 nC @ 10 V
Input Capacitance (Ciss.
4707 pF @ 25 V
Mfr
NXP USA Inc.
Mounting Type
Through Hole
Operating Temperature
-55?C ~ 175?C (TJ)
Package
Tube
Package / Case
TO-220-3
Part Status
Obsolete
Power Dissipation (Max)
158W (Tc)
Rds On (Max) @ Id, Vgs
3.9mOhm @ 25A, 10V
Series
TrenchMOS?
Supplier Device Package
TO-220AB
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?16V
Vgs(th) (Max) @ Id
2.8V @ 1mA