Attributes

Key Value
Capacitance @ Vr, F198pF @ 1V, 1MHz
CategoryDiscrete Semiconductor .
Current - Average Recti.6A
Current - Reverse Leaka.30 ?A @ 650 V
Diode TypeSilicon Carbide Schottky
MfrWeEn Semiconductors
Mounting TypeSurface Mount
Operating Temperature -.175?C
PackageTape & Reel (TR)
Package / Case4-VSFN Exposed Pad
Product StatusActive
Reverse Recovery Time (.0 ns
Series-
SpeedNo Recovery Time > 500m.
Supplier Device Package5-DFN (8x8)
Voltage - DC Reverse (V.650 V
Voltage - Forward (Vf) .1.7 V @ 6 A
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