Attributes

Key Value
Channel TypeP
ConfigurationDual Source ; Quad Drain
Dimensions5.00 x 4.00 x 1.50 mm
Drain Current-2.3 A
Drain to Source On Resi.0.4 Ohms
Drain to Source Voltage-20 V
Forward Transconductance2.5 S
Forward Voltage, Diode-1.2 V
Gate to Source Voltage?12 V
Height0.059" (1.5mm)
Input Capacitance290 pF @ -15 V
Junction to Ambient The.62.5 ?C/W
Length0.196 in
Maximum Operating Tempe.+150 ?C
Minimum Operating Tempe.-55 ?C
Mounting TypeSurface Mount
Number of Elements per .2
Number of Pins8
Operating Temperature-55 to 150 ?C
Package TypeSO-8
PolarizationP-Channel
Power Dissipation2 W
SeriesHEXFET Series
Temperature Operating R.-55 to +150 ?C
Total Gate Charge9.3 nC
Turn Off Delay Time42 ns
Turn On Delay Time12 ns
Typical Gate Charge @ V.9.3 nC @ -10 V
Voltage, Breakdown, Dra.-20 V
Width0 in
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