Attributes

Key Value
Base Product NumberIPB035
CategoryDiscrete Semiconductor .
Current - Continuous Dr.100A (Tc)
Drain to Source Voltage.80 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .117 nC @ 10 V
Input Capacitance (Ciss.8110 pF @ 40 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusActive
Power Dissipation (Max)214W (Tc)
Rds On (Max) @ Id, Vgs3.5mOhm @ 100A, 10V
SeriesOptiMOS?
Supplier Device PackageD?PAK (TO-263AB)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 155?A
prev


As an Amazon Associate I earn from qualifying purchases.

1759868823.2159