Infineon Technologies BSZ16DN25NS3GATMA1

mpnBSZ16DN25NS3GATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	BSZ16DN25
Category	Discrete Semiconductor .
Current - Continuous Dr.	10.9A (Tc)
Drain to Source Voltage.	250V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	11.4nC @ 10V
Input Capacitance (Ciss.	920pF @ 100V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerTDFN
Part Status	Active
Power Dissipation (Max)	62.5W (Tc)
Rds On (Max) @ Id, Vgs	165mOhm @ 5.5A, 10V
Series	OptiMOS?
Supplier Device Package	PG-TSDSON-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 32?A

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