Attributes

Key Value
Base Product NumberSPP03N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3.2A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .16 nC @ 10 V
Input Capacitance (Ciss.420 pF @ 25 V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)38W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs1.4Ohm @ 2A, 10V
SeriesCoolMOS?
Supplier Device PackagePG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id5.5V @ 135?A
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