Attributes

Key Value
CaseTO263
Drain current110A
Drain-source voltage150V
Features of semiconduct.thrench gate power mosf.
Gate charge150nC
Kind of channelenhanced
Kind of packagetube
ManufacturerIXYS
MountingSMD
On-state resistance13m?
Polarisationunipolar
Power dissipation480W
Reverse recovery time85ns
Type of transistorN-MOSFET
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