Infineon IPD220N06L3GBTMA1

mpnIPD220N06L3GBTMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

INFINEON IPD220N06L3GBTMA1 Single N-Channel 60 V 22 mOhm 7 nC OptiMOS Power Mosfet - DPAK - 2500 item(s)

INFINEON IPD220N06L3GBTMA1 Single N-Channel 60 V 22 mOhm 7 nC OptiMOS Power Mosfet - DPAK - 2500 item(s)

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Brand: Infineon
PartNumber: IPD220N06L3GBTMA1
Model: IPD220N06L3GBTMA1
PackageQuantity: 1
Manufacturer: INFINEON
Label: INFINEON

Attributes

Key	Value
Base Product Number	IPD220
Category	Discrete Semiconductor .
Current - Continuous Dr.	30A (Tc)
Drain to Source Voltage.	60 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	10 nC @ 4.5 V
Input Capacitance (Ciss.	1600 pF @ 30 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads.
Power Dissipation (Max)	36W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	22mOhm @ 30A, 10V
Series	OptiMOS?
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.2V @ 11?A

All Prices

Img	Seller	Supplier SKU	Min Price	MOQ	In Stock	Lead Time	Brand	Weight	Preferred Tier
	Future Electronics	8106168	0.36	1	5000		Infineon		0.36 @ 100
	Newark	12AC9708	0.476	1	100		INFINEON		0.476 @ 100
	Digi-Key	2081015	0.8	1	100		Infineon Technologies		0.8 @ 100

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