Attributes

Key Value
Base Product NumberIPL60R105
CategoryDiscrete Semiconductor .
Current - Continuous Dr.33A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .45 nC @ 10 V
Input Capacitance (Ciss.1952 pF @ 400 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case4-PowerTSFN
Part StatusActive
Power Dissipation (Max)137W (Tc)
Rds On (Max) @ Id, Vgs105mOhm @ 10.5A, 10V
SeriesCoolMOS? P7
Supplier Device PackagePG-VSON-4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 530?A
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