Attributes

Key Value
Base Product NumberFDMS86150
CategoryDiscrete Semiconductor .
Current - Continuous Dr.16A (Ta), 128A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .62 nC @ 10 V
Input Capacitance (Ciss.4065 pF @ 50 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Power Dissipation (Max)3.3W (Ta), 187W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs4.85mOhm @ 16A, 10V
SeriesPowerTrench?
Supplier Device Package8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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