Harris Corporation RFD7N10LE

mpnRFD7N10LE
brandname: Harris Corporation
manufacturername: Harris Corporation

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	7A (Tc)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	5V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	150 nC @ 10 V
Input Capacitance (Ciss.	360 pF @ 25 V
Mfr	Harris Corporation
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Bulk
Package / Case	TO-220-3
Part Status	Active
Power Dissipation (Max)	47W (Tc)
Rds On (Max) @ Id, Vgs	300mOhm @ 7A, 5V
Series	-
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	+10V, -8V
Vgs(th) (Max) @ Id	2V @ 250?A

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