Attributes

Key Value
Additional Feature MEGAFET, LOGIC LEVEL C.
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN D.
Drain Current-Max (Abs). 7 A
Drain Current-Max (ID) 7 A
Drain-source On Resista. 300 m?
DS Breakdown Voltage-Min 100 V
FET Technology METAL-OXIDE SEMICONDUC.
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Manufacturer Harris Semiconductor
Manufacturer Part Number RFD7N10LE
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-M. 175 ?C
Package Body Material PLASTIC/EPOXY
Package Description IN-LINE, R-PSIP-T3
Package Shape RECTANGULAR
Package Style IN-LINE
Packaging -
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