Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.80A (Tc)
DescriptionN-CHANNEL POWER MOSFET
Detailed DescriptionN-Channel 40 V 80A (Tc).
Digi-Key Part Number2156-IPB80N04S2H4-ATMA2.
Drain to Source Voltage.40 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .148 nC @ 10 V
Input Capacitance (Ciss.4400 pF @ 25 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPB80N04S2H4-ATMA2
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)300W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs3.7mOhm @ 80A, 10V
SeriesCoolMOS?
Supplier Device PackagePG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev


As an Amazon Associate I earn from qualifying purchases.

1759919707.1647