Infineon Technologies IRF6621TR1PBF

mpnIRF6621TR1PBF
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	12A (Ta), 55A (Tc)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	17.5 nC @ 4.5 V
Input Capacitance (Ciss.	1460 pF @ 15 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-40?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	DirectFET? Isometric SQ
Power Dissipation (Max)	2.2W (Ta), 42W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	9.1mOhm @ 12A, 10V
Series	HEXFET?
Supplier Device Package	DIRECTFET? SQ
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.25V @ 250?A

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