Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.55A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .4V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .140 nC @ 5 V
Input Capacitance (Ciss.3700 pF @ 25 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusDiscontinued at Digi-Key
Power Dissipation (Max)3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs26mOhm @ 29A, 10V
SeriesHEXFET?
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id2V @ 250?A
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