Attributes

Key Value
Base Product NumberFDS62
CategoryDiscrete Semiconductor .
Current - Continuous Dr.13A (Ta)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .14 nC @ 5 V
Input Capacitance (Ciss.1205 pF @ 15 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm .
Power Dissipation (Max)3W (Ta)
Product StatusObsolete
Rds On (Max) @ Id, Vgs11.3mOhm @ 13A, 10V
SeriesPowerTrench?
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A
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