Attributes

Key Value
@Ic (A)1.0m
@VCE (test) (V)5.0
C(ob) (F)6.0p
CaseTO39
Collector Capacitance (.12 pF
Derate (Amb) (W/?C)4.5m
Forward Current Transfe.30
hfe50
Ic Max. (A)100m
Icbo Max. @Vcb Max. (A)100n
ManufacturerST Microelectronics - S.
Max. Operating Junction.200 ?C
Max. PD (W)800m
Maximum Collector Curre.0.1 A
Maximum Collector Power.0.8 W
Maximum Collector-Base .125 V
Maximum Collector-Emitt.125 V
Maximum Emitter-Base Vo.5 V
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.N/A
PolarityNPN
SKU115718
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.40M
Transition Frequency (f.40 MHz
TypeTransistor Silicon NPN
Vbr CBO125
Vbr CEO125
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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