Attributes

Key Value
Base Product NumberSI8824
CategoryDiscrete Semiconductor .
Current - Continuous Dr.2.1A (Ta)
DescriptionMOSFET N-CH 20V 2.1A MI.
Detailed DescriptionN-Channel 20 V 2.1A (Ta.
Digi-Key Part NumberSI8824EDB-T2-E1TR-ND - .
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .1.2V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .6 nC @ 4.5 V
Input Capacitance (Ciss.400 pF @ 10 V
ManufacturerVishay Siliconix
Manufacturer Product Nu.SI8824EDB-T2-E1
Manufacturer Standard L.63 Weeks
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case4-XFBGA, CSPBGA
Power Dissipation (Max)500mW (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs75mOhm @ 1A, 4.5V
SeriesTrenchFET?
Supplier Device Package4-Microfoot
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?5V
Vgs(th) (Max) @ Id800mV @ 250?A
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