Attributes

Key Value
@Ic (A)10m
@VCE (test) (V)10
C(ob) (F)11p
CaseTO51
Collector Capacitance (.11 pF
Derate (Amb) (W/?C)500u
Forward Current Transfe.30
hfe75
Ic Max. (A)800m
ManufacturerTIIB
Max. Operating Junction.200 ?C
Max. PD (W)360m
Maximum Collector Curre.0.8 A
Maximum Collector Power.0.36 W
Maximum Collector-Base .60 V
Maximum Collector-Emitt.30 V
Maximum Emitter-Base Vo.5 V
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.3-10
PolarityNPN
SKU1281206
Surface Mounted Yes/NoYES
t(f) Max. (S)30n
t(stor) Max. (S)40n
Tr Max. (s)65n
Trans. Freq (Hz) Min.200M
Transition Frequency (f.200 MHz
TypeTransistor Silicon NPN
Vbr CBO60
Vbr CEO40
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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