Attributes

Key Value
Base Product NumberFDB0165
CategoryDiscrete Semiconductor .
Current - Continuous Dr.310A (Tc)
Drain to Source Voltage.80 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .304 nC @ 10 V
Input Capacitance (Ciss.23660 pF @ 40 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-7, D?Pak (6 Lead.
Part StatusActive
Power Dissipation (Max)3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs1.6mOhm @ 36A, 10V
SeriesPowerTrench?
Supplier Device PackageTO-263-7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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