Attributes

Key Value
@Ic (A)150m
@VCE (test) (V)6.0
C(ob) (F)12p
CaseTO39
Collector Capacitance (.12 pF
Derate (Amb) (W/?C)4.6m
Forward Current Transfe.40
hfe40
Ic Max. (A)1.0
Icbo Max. @Vcb Max. (A)50n
ManufacturerST Microelectronics - S.
Max. Operating Junction.200 ?C
Max. PD (W)800m
Maximum Collector Curre.1 A
Maximum Collector Power.0.8 W
Maximum Collector-Base .60 V
Maximum Collector-Emitt.30 V
Maximum Emitter-Base Vo.6 V
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.3-12
PolarityNPN
SKU85959
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.50M
Transition Frequency (f.50 MHz
TypeTransistor Silicon NPN
Vbr CBO60
Vbr CEO30
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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