Attributes

Key Value
@Ic (A)10m
@VCE (test) (V).30
C(ob) (F)6p
CaseTO51
Collector Capacitance (.6 pF
Derate (Amb) (W/?C)588u
Forward Current Transfe.40
hfe30
Ic Max. (A)200m
Icbo Max. @Vcb Max. (A)10u
ManufacturerTIIB
Max. Operating Junction.200 ?C
Max. PD (W)300m
Maximum Collector Curre.0.2 A
Maximum Collector Power.0.3 W
Maximum Collector-Base .12 V
Maximum Collector-Emitt.12 V
Maximum Emitter-Base Vo.4 V
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.3-10
PolarityPNP
SKU735855
Surface Mounted Yes/NoYES
t(f) Max. (S)90n+
Tr Max. (s)60n
Trans. Freq (Hz) Min.400M
Transition Frequency (f.400 MHz
TypeTransistor Silicon PNP
Vbr CBO12
Vbr CEO12
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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