mpn
NX138BKR
brand
name: NXP Semiconductors
manufacturer
name: NXP Semiconductors
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
265mA (Ta)
Drain to Source Voltage.
60 V
Drive Voltage (Max Rds .
2.5V, 10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
0.49 nC @ 4.5 V
Input Capacitance (Ciss.
20.2 pF @ 30 V
Mfr
NXP Semiconductors
Mounting Type
Surface Mount
Operating Temperature
-55?C ~ 150?C (TJ)
Package
Bulk
Package / Case
TO-236-3, SC-59, SOT-23.
Power Dissipation (Max)
310mW (Ta)
Product Status
Active
Rds On (Max) @ Id, Vgs
3.5Ohm @ 200mA, 10V
Series
-
Supplier Device Package
TO-236AB
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
1.5V @ 250?A