SILICONIX (VISHAY) SI3590DV-T1-E3

B0731P8WV5

SILICONIX (VISHAY) SI3590DV-T1-E3 Dual N / P -Channel 30 V 0.077/0.17 Ohm Surface Mount Power MosFet - TSOP-6 - 25 item(s)

SILICONIX (VISHAY) SI3590DV-T1-E3 Dual N / P -Channel 30 V 0.077/0.17 Ohm Surface Mount Power MosFet - TSOP-6 - 25 item(s)zoom

Attributes

Key Value
Base Product NumberSI3590
CategoryDiscrete Semiconductor .
Current - Continuous Dr.2.5A, 1.7A
Drain to Source Voltage.30V
FET FeatureLogic Level Gate
FET TypeN and P-Channel
Gate Charge (Qg) (Max) .4.5nC @ 4.5V
Input Capacitance (Ciss.-
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Power - Max830mW
Product StatusActive
Rds On (Max) @ Id, Vgs77mOhm @ 3A, 4.5V
SeriesTrenchFET?
Supplier Device Package6-TSOP
Vgs(th) (Max) @ Id1.5V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Win SourceSI3590DV-T1-E30.233215100Vishay0.233 @ 215
ArrowSI3590DV-T1-E30.27230003000Vishay0.272 @ 3000
Future Electronics58677670.2883000100Vishay0.288 @ 3000
thumbzoomNewark06J76260.4053000100VISHAY0.405 @ 100
Mouser781-SI3590DV-T1-E30.424137662Vishay0.424 @ 100
Digi-Key17647340.647881100Vishay Siliconix0.64788 @ 100
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