Attributes

Key Value
Channel TypeN
ConfigurationDual Drain
Dimensions5.00 x 4.00 x 1.50 mm
Drain Current4.9 A
Drain to Source On Resi.0.08 Ohms
Drain to Source Voltage30 V
Forward Transconductance5.2 S
Forward Voltage, Diode1 V
Gate to Source Voltage?20 V
Height0.059" (1.5mm)
Input Capacitance520 pF @ 25 V
Length0.196 in
Maximum Operating Tempe.+150 ?C
Minimum Operating Tempe.-55 ?C
Mounting TypeSurface Mount
Number of Elements per .2
Number of Pins8
Package TypeSO-8
PolarizationDual N-Channel
Power Dissipation2 W
Product HeaderHexfet? Power MOSFET
SeriesHEXFET Series
Temperature Operating R.-55 to +150 ?C
Total Gate Charge25 nC
Turn Off Delay Time22 ns
Turn On Delay Time6.8 ns
Typical Gate Charge @ V.Maximum of 25 nC @ 10 V
Voltage, Breakdown, Dra.30 V
Width0 in
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