Infineon Technologies IPP60R600E6XKSA1

mpnIPP60R600E6XKSA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	7.3A (Tc)
Drain to Source Voltage.	600 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	20.5 nC @ 10 V
Input Capacitance (Ciss.	440 pF @ 100 V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Bulk
Package / Case	TO-220-3
Power Dissipation (Max)	63W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	600mOhm @ 2.4A, 10V
Series	CoolMOS?
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.5V @ 200?A

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