Attributes

Key Value
@Ic (A)150m
@VCE (test) (V)10
C(ob) (F)12p
CaseTO39
Collector Capacitance (.12 pF
Derate (Amb) (W/?C)3.4m
Forward Current Transfe.40
hfe40
Ic Max. (A)600m
Icbo Max. @Vcb Max. (A).05u
ManufacturerNXP Semiconductors
Max. Operating Junction.200 ?C
Max. PD (W)600m
Maximum Collector Curre.0.6 A
Maximum Collector Power.0.6 W
Maximum Collector-Base .50 V
Maximum Collector-Emitt.50 V
Maximum Emitter-Base Vo.5 V
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.3-12
PolarityPNP
SKU116808
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.100M
Transition Frequency (f.100 MHz
TypeTransistor Silicon PNP
Vbr CBO50
Vbr CEO50
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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