onsemi FCP850N80Z

mpnFCP850N80Z
brandname: onsemi
manufacturername: onsemi

Attributes

Key	Value
Base Product Number	FCP850
Category	Discrete Semiconductor .
Current - Continuous Dr.	8A (Tc)
Drain to Source Voltage.	800 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	29 nC @ 10 V
Input Capacitance (Ciss.	1315 pF @ 100 V
Mfr	onsemi
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-220-3
Power Dissipation (Max)	136W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	850mOhm @ 3A, 10V
Series	SuperFET? II
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4.5V @ 600?A

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