IXYS IXTP3N100D2

mpnIXTP3N100D2
brandname: IXYS
manufacturername: IXYS

Attributes

Key	Value
Current - Continuous Dr.	3A (Tc)
Drain to Source Voltage.	1000 V
Drive Voltage (Max Rds .	-
FET Feature	Depletion Mode
FET Type	N-Channel
Gate Charge (Qg) (Max) .	37.5 nC @ 5 V
Input Capacitance (Ciss.	1020 pF @ 25 V
Mfr	IXYS
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package / Case	TO-220-3
Part Status	Active
Power Dissipation (Max)	125W (Tc)
Rds On (Max) @ Id, Vgs	5.5Ohm @ 1.5A, 0V
Series	-
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	-

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