NXP PSMN8R5-60YS,115

B011NB2M0U

NXP PSMN8R5-60YS,115 MOSFET, N CHANNEL, 60V, 76A, 4-SOT-669

NXP PSMN8R5-60YS,115 MOSFET, N CHANNEL, 60V, 76A, 4-SOT-669zoom

Attributes

Key Value
Base Product NumberPSMN8R5
CaseLFPAK56,
CategoryDiscrete Semiconductor .
Current - Continuous Dr.76A (Tc)
Drain current76A
Drain to Source Voltage.60 V
Drain-source voltage60V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate charge39nC
Gate Charge (Qg) (Max) .39 nC @ 10 V
Gate-source voltage?20V
Input Capacitance (Ciss.2370 pF @ 30 V
Kind of channelenhanced
Kind of packagereel,
ManufacturerNEXPERIA
MfrNexperia USA Inc.
MountingSMD
Mounting TypeSurface Mount
On-state resistance5.6m?
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseSC-100, SOT-669
Polarisationunipolar
Power dissipation106W
Power Dissipation (Max)106W (Tc)
Product StatusActive
Pulsed drain current303A
Rds On (Max) @ Id, Vgs8mOhm @ 15A, 10V
Series-
Supplier Device PackageLFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Type of transistorN-MOSFET
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 1mA

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18093100.452716000NXP Semiconductors0.4527 @ 1
RS Delivers151-33781.051211500Nexperia1.0512 @ 1
thumbzoomNewark63R85731.231950NEXPERIA1.23 @ 1
thumbzoomTMEPSMN8R5-60YS.1151.4311490NEXPERIA1.43 @ 1
Digi-Key22063611.64160Nexperia USA Inc.1.64 @ 1
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