Attributes

Key Value
Base Product NumberSIHD180
CategoryDiscrete Semiconductor .
Current - Continuous Dr.19A (Tc)
Drain to Source Voltage.600V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .32nC @ 10V
Input Capacitance (Ciss.1080pF @ 100V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusActive
Power Dissipation (Max)156W (Tc)
Rds On (Max) @ Id, Vgs195mOhm @ 9.5A, 10V
SeriesE
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A
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